1996. 10. 16
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3191
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF BAND AMPLIFIER APPLICATION.
FEATURE
Low Noise Figure : NF=3.5dB(Max.) (f=1MHz).
MAXIMUM RATING (Ta=25 )
1
2
3
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. EMITTER
2. COLLECTOR
3. BASE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
4
V
Collector Current
I
C
100
mA
Emitter Current
I
E
-100
mA
Collector Power Dissipation
P
C
400
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
Classification R:40 80 , O:70 140 , Y:120 240
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=12V, I
C
=2mA
40
-
240
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.4
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=10mA, I
B
=1mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=2mA
80
120
-
MHz
Reverse Transfer Capacitance
C
re
V
CB
=10V, f=1MHz
-
2.2
3.0
pF
Collector-Base Time Constant
C
c
rbb
'
V
CE
=10V, I
E
=-1mA, f=30MHz
-
30
50
pS
Noise Figure
NF
V
CE
=10V, I
C
=1mA, f=1MHz, Rg=50
-
2.0
3.5
dB
1996. 10. 16
2/3
KTC3191
Revision No : 1
20
COLLECTOR CURRENT
0
C
1000
1500
BASE CURRENT
B
STATIC CHARACTERISTICS
10
DC CURRENT GAIN h
FE
500
10
3
1
0.5
COLLECTOR CURRENT I (mA)
C
h - I
40
60
80
100
500
0
10
20
30
0.8
0.6
0.4
0.2
I (mA)
VOLTAGE V (V)
BASE-EMITTER
BE
I (
A)
VOLTAGE V (V)
COLLECTOR-EMITTER
CE
I =0.1mA
B
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0
V =2V
CE
CE
V =2V
COMMON
EMITTER
Ta=25 C
FE
C
30
100 200
30
50
100
300
COLLECTOR CURRENT I (mA)
C
T
f - I
10
0.5
1
300
500
50
30
100
TRANSITION FREQUENCY f (MHz)
T
3
10
C
30
200
100
COMMON
EMITTER
V =10V
Ta=25 C
CE
y PARAMETERS (Typ.) (COMMON EMITTER V
CE
=6V, I
E
=-1mA, f=1MHz)
CHARACTERISTIC
SYMBOL
KTC3190-R
KTC3190-O
KTC3190-Y
UNIT
Input Conductance
g
ie
0.5
0.35
0.22
mS
Input Capacitance
C
ie
50
48
46
pF
Output Conductance
g
oe
4
5
6.5
S
Output Capacitance
C
oe
3.7
3.4
3.2
pF
Forward Transfer Admittance
|y
fe
|
36
36
36
mS
Phase Angle of Forward Transfer Admittance
fe
-1.6
-1.6
-1.6
Reverse Transfer Admittance
|y
re
|
14
14
14
S
Phase Angle of Reverse Transfer Admittance
re
-90
-90
-90
1994. 6. 24
3/3
KTC3191
Revision No : 0
10
FORWARD TRANSFER ADMITTANCE
5
300
2
COLLECTOR-EMITTER VOLTAGE V (V)
CE
y ,
- V
y - I
E
EMITTER CURRENT I (mA)
-0.1
-0.3
-0.5
re
5
REVERSE TRANSFER ADMITTANCE
10
10
REVERSE TRANSFER ADMITTANCE
3
re
100
2
COLLECTOR-EMITTER VOLTAGE V (V)
CE
y - V
y
- I
E
EMITTER CURRENT I (mA)
-0.1
-0.3
-0.5
-1
100
5
10
re
E
y (
S)
-1
-3
-5
30
50
100
COMMON EMITTER
V =6V
f=1MHz
Ta=25 C
=-90 C
CE
re
fe
re
CE
4
6
8
10
12
14
16
y (mS)
fe
30
50
100
fe
TRANSFER ADMITTANCE
( )
PHASE ANGLE OF FORWARD
-0.5
-1
-3
-5
-10
-30
COMMON EMITTER
I =-1mA
f=1MHz
Ta=25 C
E
y
fe
fe
re
CE
y (
S)
4
6
8
10
12
14
16
5
30
50
COMMON EMITTER
I =-1mA
f=1MHz
Ta=25 C
=-90
E
re
fe
E
fe
,
-3
-5
30
50
fe
y (mS)
FORWARD TRANSFER ADMITTANCE
PHASE ANGLE OF FORWARD
TRANSFER ADMITTANCE
( )
fe
-0.5
-1
-3
-5
-10
COMMON EMITTER
V =6V
f=1MHz
Ta=25 C
CE
y R, O, Y
fe
fe
R, O, Y
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